MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Features
■ Pin Description
• -30V/-40A
RDS(ON) = 6.1mΩ (max.) @ VGS= -10V
RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
• HBM ESD protection level pass 8KV.
• 100% UIS+Rg tested.
D
D
D
D
• Reliable and Rugged.
• Lead free and green device available
(RoHS compliant).
PIN 1
G
S
S
S
DFN3.3x3.3-8(Saw-EP)
Note: The diode connected between the gate and
source serves only as protection against ESD.
No gate overvoltage rating is implied.
( 5,6,7,8 )
DDD
D
■ Application
• Power management in notebook computer
portable equipment and battery powered
system.
(4)
G
S S S
(1, 2, 3)
P-ChannelMOSFET
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
Symbol
VDSS
PARAMETER
CONDITIONS
MSL120N06G
UNIT
V
Drain-Source Voltage
-30
-40
TC = 25OC
TC = 100OC
TC = 25OC
ID
Continuous Drain Current(Note:2)
A
-40
IDM
VGSS
IS
Pulsed Drain Current(Note:2)
-160
±25
-40
Gate-Source Voltage
V
A
Diode Continuous Forward Current(Note:2)
Avalanche Current, single pulse (Note:1)
Avalanche Energy, single pulse (Note:1)
TC = 25OC
L=0.5mH
L=0.5mH
TC = 25OC
TC = 100OC
t ≤ 10s
IAS
27
A
EAS
182
62.5
25
mJ
Maximum Power Dissipation
PD
W
30
OC/W
OC
Thermal Resistance-Junction to Ambient
Operating and Storage Temperature Range
Maximum Power Dissipation
RθJA
TJ, TSTG
PD
Steady State
75
-55 ~ +150
4.2
TA = 25OC
TA = 70OC
TA = 25OC
TA = 70OC
Steady State
W
2.7
-21.3
-17.1
2
Continuous Drain Current
ID
A
OC/W
Thermal Resistance-Junction to case
RθJC
NOTE : 1.UIS tested and pulse width limited by maximum junction temperature 150OC (initial temperature TJ =25OC).
2.Package limited.
Document ID : DS-22M72
Revised Date : 2015/08/18
Revision : C
1
CITC [ Chip Integration Technology Corporation ]
