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SBF1045CT 参数 Datasheet PDF下载

SBF1045CT图片预览
型号: SBF1045CT
PDF下载: 下载PDF文件 查看货源
内容描述: [10A High Power Schottky Barrier Rectifiers]
分类和应用: 局域网功效瞄准线二极管
文件页数/大小: 3 页 / 97 K
品牌: CITC [ Chip Integration Technology Corporation ]
 浏览型号SBF1045CT的Datasheet PDF文件第2页浏览型号SBF1045CT的Datasheet PDF文件第3页  
SBF1040CT THRU SBF1065CT  
10A High Power Schottky Barrier Rectifiers  
Features  
Outline  
Low power loss, high efficiency.  
ITO-220AB  
High current capability, low forward voltage drop.  
High surge capability.  
Guardring for overvoltage protection.  
Ultra high-speed switching.  
0.189(4.80)  
0.408(10.36)  
0.165(4.20)  
0.382(9.70)  
0.130(3.30)  
0.098(2.50)  
Silicon epitaxial planar chip, metal silicon junction.  
Suffix "G" indicates Halogen-free part, ex.SBF1040CTG.  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
0.600(15.5)  
0.580(14.5)  
0.138(3.50)  
MAX  
Marking code  
0.339(8.60)  
0.315(8.00)  
1
2
3
0.055(1.4)  
0.039(1.0)  
0.114(2.90)  
0.098(2.50)  
0.171(4.35)MAX  
0.067(1.7)  
0.039(1.0)  
0.512(13.0)  
MIN  
Mechanical data  
0.035(0.90)  
0.012(0.30)  
Epoxy : UL94-V0 rated flame retardant.  
Case : JEDEC ITO-220AB molded plastic body over  
passivated chip.  
0.110(2.80)  
0.091(2.30)  
0.031(0.80)MAX  
Lead : Axial leads, solderable per MIL-STD-202,  
Method 208 guranteed.  
PIN 1  
PIN 3  
PIN 2  
Polarity: Color band denotes cathode end.  
Mounting Position : Any.  
Dimensions in inches and (millimeters)  
Weight : Approximated 2.25 gram.  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Parameter  
Conditions  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
10  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current  
IFSM  
125  
A
VR = VRRM TA = 25OC  
VR = VRRM TA = 100OC  
0.5  
20  
IR  
Reverse current  
mA  
CJ  
Diode junction capacitance  
Thermal resistance  
f=1MHz and applied 4V DC reverse voltage  
Junction to ambient  
250  
55  
pF  
OC/W  
OC  
RθJA  
TSTG  
Storage temperature  
-55  
+175  
Max.  
Max.  
Max.  
RMS voltage  
VRMS (V)  
Max. DC  
blocking voltage  
VR (V)  
forward voltage  
@5A, TA = 25OC  
VF (V)  
repetitive peak  
reverse voltage  
VRRM (V)  
Operating temperature  
TJ (OC)  
Symbol  
Marking code  
SBF1040CT  
SBF1045CT  
SBF1060CT  
SBF1065CT  
SBF1040CT  
SBF1045CT  
SBF1060CT  
SBF1065CT  
40  
45  
60  
65  
28  
31.5  
42  
40  
45  
60  
65  
0.55  
0.70  
-55 ~ +150  
45.5  
Document ID : DS-11K69  
Issued Date : 2010/05/05  
Revised Date : 2012/05/31  
Revision : C3  
1