CLA101
Four Channel Phototransistor Array
0.280 (7.11)
0.270 (6.86)
B
D
®
Clairex
September, 2001
Technologies, Inc
.
0.005 (0.13) nom.
0.050 (1.27) max
COMMON
A
=
0.250 (6.35) min.
A
C
=
D
0.180 (4.57)
0.170 (4.32)
0.100 (2.54) typ.
COMMON
A
B
C
D
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Case 19
features
• Full range of sensor chips
• Full range of emitter chips
• Miniature surface mountable
package
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
description
The CLA101 four channel
phototransistor array can be custom
designed with photodiode or photo-
IC chips. An emitter version is also
available using same wavelength or
different wavelength die. For
additional information, call Clairex.
storage temperature.......................................................................... -40°C to +100°C
operating temperature ..................................................................... -40°C to +100°C
lead soldering temperature
(1)
............................................................................ 260°C
(2)
maximum continuous current .......................................................................... 50mA
peak forward current (1.0ms pulse width, 10% duty cycle) .................................... 1A
reverse voltage ....................................................................................................... 5V
continuous power dissipation
(3)
......................................................................... 75mW
notes:
1.
2.
3.
At the base of the header for 5 seconds maximum.
Derate linearly 0.53mA/°C from 25°C free air temperature to T
A
= +100°C.
Derate linearly 0.80mW/°C from 25°C free air temperature to T
A
= +100°C.
electrical characteristics (T
A
= 25°C unless otherwise noted)
symbol
I
L
I
D
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
t
r
, t
f
parameter
Light current
(4)
Matching factor
Dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-emitter saturation voltage
Rise and fall times
min
150
-
-
40
5.0
-
-
typ
-
-
-
-
-
-
3.0
max
-
0.4
100
-
-
0.4
-
units
µA
-
nA
V
V
V
µs
test conditions
E
e
=1mW/cm
2
, V
CE
=5V
(I
LHIGH
-I
LLOW
)/I
LHIGH
V
CE
= 10V, H=0
I
CE
= 0.1mA
I
EC
= 0.1mA
E
e
=20mW/cm
2
, I
CE
=.5mA
R
L
=100Ω, V
CE
= 5V
Note:
4. Radiation source for light current testing is tungsten at 2854°K.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
