CLD340
High Temperature AlGaAs Photodiode
electrical characteristics at T
A
= 25°C
(unless otherwise noted)
symbol
I
SC
I
D
R
S
V
BR
C
j
Θ
HP
t
r
, t
f
parameter
Short-circuit current
(3)
Dark current
Shunt resistance
Reverse breakdown
Junction capacitance
Total angle at half sensitivity points
0utput rise and fall time
(3)
min
2.0
-
-
20
-
-
-
typ
3.5
0.1
3000
-
170
70
1.0
max
-
1.0
-
-
-
-
-
units
µA
nA
Meg.Ω
V
pF
deg.
µs
®
Clairex
Technologies, Inc
.
test conditions
V
BIAS
= 0V, E
e
= 1mW/cm
2
V
R
= 5V, E
e
= 0
V
R
= 10mV
I
R
= 10µA
V
BIAS
= 0, f = 1MHz
R
L
= 50Ω, V
R
= 5V
note:
3. Radiation source is an aluminum gallium arsenide IRED with a peak emission wavelength of 850nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
