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CLE334E 参数 Datasheet PDF下载

CLE334E图片预览
型号: CLE334E
PDF下载: 下载PDF文件 查看货源
内容描述: 非常高的输出砷化铝镓四核芯片的红外发光二极管阵列 [Very High Output Aluminum Gallium Arsenide Quad Chip IRED Array]
分类和应用: 二极管
文件页数/大小: 1 页 / 102 K
品牌: CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
   
CLE334E
Very High Output Aluminum Gallium Arsenide
Quad Chip IRED Array
0.130 (3.30) max
1.00 (25.4) min.
0.050 (1.27) max
®
Clairex
0.213 (5.41)
0.207 (5.26)
Technologies, Inc
.
August, 2003
0.100
0.100 (2.54) pin circle
(2.54) dia. pin circle
CATHODE
0.169 (4.29)
0.163 (4.14)
(connected
to case)
ANODE
0.010 (0.25) nom
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
Anode leads must be externally connected together.
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Case 5
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
850nm wavelength
TO-46 with epoxy-dome lens
very wide emission angle
> 10MHz operation
cathode connected to case
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
description
storage temperature ...................................................................... -40°C to +125°C
operating temperature ................................................................... -40°C to +100°C
lead soldering temperature
(1)
......................................................................... 260°C
continuous forward current
(2)(4)
..................................................................... 500mA
peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 4A
reverse voltage .................................................................................................... 5V
continuous power dissipation
(3)
.................................................................... 500mW
The CLE334E is an advanced, high
notes:
efficiency, high speed, AlGaAs
1. 0.06” (1.5mm) from the header for 5 seconds maximum
infrared-emitting diode with four times
2. Derate linearly 5.33mA/°C from 25°C free air temperature to T
A
= +100°C.
the emitting surface of the typical
3. Derate linearly 5.33mW/°C from 25°C free air temperature to T
A
= +100°C.
AlGaAs emitter. High power output is
4. Operation at this level requires a proper heat sink..
achieved with four equally spaced
anode contacts for higher current
distribution. Anodes contacts are
bonded in pairs, each pair bonded to
a separate lead. Chip size is 0.030”
by 0.030”. The TO-46 header
provides the thermal environment for
reliable operation over a wide
temperature range.
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
P
O
V
F
I
R
λ
P
BW
Θ
HP
t
r
t
f
parameter
Power output
(6)
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth at half power points
Emission angle at half power points
Radiation rise time
Radiation fall time
min
-
-
-
-
-
-
-
-
typ
25
1.0
-
850
35
100
20
40
max
-
1.9
10
-
-
-
-
-
units
mW
V
µA
nm
nm
deg.
ns
ns
test conditions
I
F
= 100mA
I
F
= 100mA
V
R
= 5V
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F(PK)
=100mA, f =1kHz, D.C. = 50%
I
F(PK)
=100mA, f =1kHz, D.C. = 50%
Revised 3/15/06
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com