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CPC3703C 参数 Datasheet PDF下载

CPC3703C图片预览
型号: CPC3703C
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用:
文件页数/大小: 4 页 / 98 K
品牌: CLARE [ CLARE ]
 浏览型号CPC3703C的Datasheet PDF文件第1页浏览型号CPC3703C的Datasheet PDF文件第2页浏览型号CPC3703C的Datasheet PDF文件第4页  
CPC3703  
PERFORMANCE DATA*  
Output Characteristics  
(TA=25ºC)  
Transfer Characteristics  
VGS(OFF) & RON Vs.Temperature  
(VDS=5V)  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
0
8
7
6
5
4
3
2
1
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
350  
VGS=-1.0  
VDS=10V  
300  
250  
ID=1mA  
VGS=0V  
VGS=-1.5  
RON  
ID=200mA  
200  
+125ºC  
150  
+25ºC  
VGS=-2.0  
VGS=-2.5  
100  
VGS(OFF)  
-55ºC  
50  
0
-3.5  
-50  
-0  
50  
Temperature (ºC)  
100  
150  
0
1
2
3
4
5
6
-3.0  
-2.5  
-2.0  
-1.5  
VDS (V)  
VGS (V)  
Maximum Rated Safe Operating Area  
at 25ºC  
Power Dissipation vs.  
Ambient Temperature  
Transconductance vs. Drain Current  
(VDS=10V)  
1.0  
0.1  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
300  
250  
200  
150  
100  
50  
-55ºC  
+25ºC  
+125ºC  
0.001  
0.0001  
0
0
10  
100  
1000  
0
20  
40  
60  
80  
100  
120  
140  
0
10 20 30 40 50 60 70 80 90 100  
VDS (V)  
Temperature (ºC)  
ID (mA)  
On-Resistance vs. Drain Current  
(VGS=0V)  
Capacitance vs. Drain Source Voltage  
(VGS=-5V)  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
600  
525  
450  
375  
300  
225  
150  
75  
VISS  
VOSS  
VRSS  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
0
10  
20  
30  
40  
VDS (V)  
ID (A)  
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please  
contact our application department.  
R03  
www.clare.com  
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