SMD General Purpose Bridge Rectifier Diode
B05S-G Thru B10S-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 0.8 A
RoHS Device
Features
-Rating to 1000V PRV.
-Ideal for printed circuit board.
-Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product.
-Pb free product.
0.106 (2.70)
0.090 (2.30)
MBS
0.031 (0.80)
0.019 (0.50)
-
0.165 (4.20)
0.150 (3.80)
+
XXX
0.014 (0.35)
0.006 (0.15)
0.275 (7.0) max
Mechanical data
-Polarity: Symbol molded on body.
0.008 (0.20)max
-Weight: 0.125 grams.
-Mounting position: Any.
0.106 (2.70)
0.090 (2.30)
0.193 (4.90)
0.177 (4.50)
Dimensions in inches and (millimeter)
Maximum Rating And Electrical Characteristics
Rating at T
A
=25°C, unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
B05S-G
Parameter
Marking
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current (Note 1)
@T
A
=40°C
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
Maximum Forward Voltage at 0.8A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
@T
J
=25°C
@T
J
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
B1S-G
B1S
100
70
100
B2S-G
B2S
200
140
200
B4S-G
B4S
400
280
400
0.8
B6S-G
B6S
600
420
600
B8S-G
B8S
800
560
800
B10S-G
Unit
B10S
1000
700
1000
V
V
V
A
B05S
50
35
50
I
FSM
V
F
I
R
30
A
V
μA
1.1
5.0
500
15
75
-55 to +150
-55 to +150
C
J
R
θJA
T
J
T
STG
pF
°C/W
°C
°C
Notes: 1. Mounted on P.C. Board.
2. Measured at 1MHz and applied reverse voltage of 4V DC.
3. Thermal resistance: Junction to Ambient.
REV:D
QW-BBR01
Page 1
Comchip Technology CO., LTD.