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BAS40 参数 Datasheet PDF下载

BAS40图片预览
型号: BAS40
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基二极管 [Surface Mount Schottky Diode]
分类和应用: 肖特基二极管光电二极管
文件页数/大小: 2 页 / 106 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
 浏览型号BAS40的Datasheet PDF文件第2页  
Surface Mount Schottky Diode
COMCHIP
www.comchip.com.tw
BAS40 Thru BAS40-06
Voltage:
40
Volts
Power:
200mW
Features
Low Turn-on Voltage
Low Forward Voltage - 0.5V(Max) @ IF = 30 mA
Very Low Capacitance - Less Than 5.0pF @ 1V
For high speed switching application, circuit
protection
SOT-23
.119 (3.0)
.110 (2.8)
.020 (0.5)
Top View
.056 (1.40)
.047 (1.20
)
Mechanical data
Case: SOT-23, Molded Plastic
Weight: 0.008 grams (approx.)
Mounting Position: Any
1
3
2
.006 (0.15)max.
BAS40
3
BAS40-04
1
2
CATHODE
ANODE
2
CATHODE
CATHODE
ANODE
CATHODE
ANODE
1
ANODE
1
2
CATHODE
3
CATHODE
3
2
ANODE
.020 (0.5)
.020 (0.5)
.103 (2.6)
.086 (2.2)
BAS40-05
BAS40-06
Dimensions in inches (millimeters)
Maximum Ratings and Thermal
Characteristics
(TA = 25°C unless
otherwise noted)
Rating
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Surge Forward Current at tp < 1 s, Tamb = 25°C
Power Dissipation(1) at Tamb = 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
F
I
FSM
P
tot
R
thJA
T
j
T
S
Value
40
200(1)
600(1)
200(1)
430(1)
150
–55 to +150
Units
V
mA
mA
mW
°C/W
°C
°C
Electrical Characterics
(TA = 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage
Capacitance
Reverse Recovery Time
Note: (1) Device on fiberglass substrate, see layout
on next page.
Symbol
V(BR)R
IR
VF
Ctot
Trr
Test Condition
IR =10µA (pulsed)
Pulse Test tp < 300µs
VR = 30V
Pulse Test tp < 300µs
IF = 1mA
IF = 40mA
VR = 0V
f = 1MHz
IF = 10mA, IR = 10mA
Irr = 1mA, RL = 100
Min
40.0
-
-
-
-
-
Typ
-
20
-
-
40
-
Max
-
100.0
380
1000
5
5
.044 (1.10)
.035 (0.90)
3
.006 (0.15)
.002 (0.05)
ANODE
ANODE
1
.037(0.95) .037(0.95)
Units
V
nA
mV
mV
pF
nS
MDS0211002A
Page 1