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CDBERT0230R 参数 Datasheet PDF下载

CDBERT0230R图片预览
型号: CDBERT0230R
PDF下载: 下载PDF文件 查看货源
内容描述: SMD肖特基势垒二极管 [SMD Schottky Barrier Diode]
分类和应用: 整流二极管
文件页数/大小: 4 页 / 128 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
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SMD Schottky Barrier Diode
CDBERT0230R
I
o
= 200 mA
V
R
= 30 Volts
RoHS Device
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.034(0.85)
0.026(0.65)
0503/SOD-723F
0.053(1.35)
0.045(1.15)
Mechanical data
-Case: 0503/SOD-723F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BB
-Mounting position: Any
0.022(0.55) Typ.
0.016(0.40) Typ.
0.022(0.55)
0.018(0.45)
-Weight: 0.002 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
200
V
V
mA
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
T
STG
T
j
-40
1
+125
+125
A
O
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
I
F
= 200 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.6
1
V
uA
REV:B
QW-A1121
Page 1
Comchip Technology CO., LTD.