SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBF0240
Io = 200 mA
V
R
= 40 Volt s
Features
(Lead-free Device)
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
1005(2512)
0.102(2.60)
0.095(2.40)
Mechanical data
Case:
1005 (2512) Standard package ,
molded plastic.
0.051(1.30)
0.043(1.10)
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
0.014(0.35) Typ.
0.035 (0.90)
0.027 (0.70)
Polarity: Indicated by cathode band.
Mounting position: Any.
0.012 (0.30) Typ.
Weight: 0.006 gram (approximately).
0.014(0.35) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
( at T
A
= 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
Io
I
FSM
P
D
T
STG
Tj
-40
-40
3000
250
+125
+125
45
40
200
V
V
mA
mA
mW
C
C
Electrical Characteristics
( at T
A
= 25 C unless otherwise noted )
Parameter
Forward voltage
Reverse current
Capacitance between terminals
V
R
= 30 V
f = 1MHz, and 10 VDC reverse voltage
Conditions
I
F
= 200 mA DC
Symbol Min Typ Max Unit
V
F
I
R
C
T
0.45
1
9
0.55
10
V
uA
pF
REV : A
RDS0311015-A
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