欢迎访问ic37.com |
会员登录 免费注册
发布采购

CDBHD1100L-G 参数 Datasheet PDF下载

CDBHD1100L-G图片预览
型号: CDBHD1100L-G
PDF下载: 下载PDF文件 查看货源
内容描述: 低VF肖特基整流桥 [Low VF Schottky Bridge Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 145 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
 浏览型号CDBHD1100L-G的Datasheet PDF文件第2页  
Low V
F
Schottky Bridge Rectifiers
COMCHIP
SMD DIODE SPECIALIST
CDBHD120L-G Thru 1100L-G
Reverse Voltage: 20 - 100 Volts
Forward Current: 1.0 Amp
Low Vf
Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• High surge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications
• Lead-free part, meet RoHS requirements
+
~
Features
Mini-DIP
.106(2.7)
.090(2.3)
~
C .02(0.5)
.043(1.1)
.027(0.7)
~
+
~
.031(0.8)
.019(0.5)
.165(4.2)
.150(3.8)
.275(7.0)
Max.
Mechanical
Data
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
.193(4.90)
.177(4.50)
.067(1.7)
.057(1.3)
.016(0.41)
.006(0.15)
.051(1.3)
.035(0.9)
.106(2.7)
.090(2.3)
.008(0.2)
Max.
.114(2.90)
.094(2.40)
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
CDBHD
-
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area,
see Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod)
120L
20
14
20
140L
40
28
40
160L
60
42
60
180L
80
56
80
1100L
100
70
100
Units
Volts
Volts
Volts
V
RRM
V
RMS
V
DC
I
AV
1.0
Amps
I
FSM
V
F
I
R
30.0
0.44
0.625
0.5
20.0
250
125
Amps
0.75
Volts
mA
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
:
Note
1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
T
A
=
25°C
T
A
= 100
°C
C
J
R
θJA
R
θJL
T
J
T
STG
pF
85.0
20.0
-55 ~ +125
-55 ~ +150
°C/W
°C
°C
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.
Page 1
MDS0702004A