Low V
F
SMD Schottky Bridge Rectifiers
CDBHD220-G Thru. CDBHD2100-G
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-Schottky barrier chips in TO-269AA bridge.
-Metal semiconductor junction with guard ring.
-Silicon epitaxial planar chips.
-Very low forward drop down voltage.
-For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications.
-Lead-free parts meet RoHS requirments.
-UL recognized file
#
E321971
~
~
.165(4.2)
.150(3.8)
.008(0.2)
.275(7.0)
MAX
.043(1.1)
.193(4.9)
.027(0.7)
~
S
MD
XX
X
-
+
~
TO-269AA
MDS
XXX
+
.031(0.8)
.019(0.5)
Mechanical data
-Case: TO-269AA, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Marked on body.
-Mounting Position: Any.
-Weight:0.22
gram(approx.).
.177(4.5)
.106(2.7)
.090(2.3)
.106(2.7)
.090(2.3)
Dimensions in inches and
(millimeters)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse
voltage
Max. DC blocking voltage
Max. RMS voltage
Max. Instantaneous forward
voltage at 2.0A
Average Forward rectified
current
2.0X2.0”(5.0x5.0mm)
copper pad,
See fig.1
on rate load
(JEDEC
methode)
Conditions
Symbol
CDBHD CDBHD CDBHD CDBHD CDBHD
Units
220-G
240-G
260-G
280-G
2100-G
V
RRM
V
RMS
V
R
V
F
I
AV
I
FSM
20
14
20
0.5
40
28
40
60
42
60
0.70
2.0
50
0.5
80
56
80
0.85
100
70
100
V
V
V
V
A
A
Peak Forward surge current
8.3ms
single half sine-wave superimposed
V
R
=V
RRM
T
A
=25°C
Reverse current
V
R
=V
RRM
T
A
=100°C
Junction to ambient
I
R
20
R
θJA
R
θJL
C
J
T
J
T
STG
-55 to +125
-65 to +175
85
mA
Thermal resistance
Junction to lead
°C/W
20
150
-55 to +150
pF
°C
°C
Diode junction capacitance
Operating junction
temperature
Sorage temperature
f=1MHz and applied
4V
DC reverse voltage
REV:B
QW-BL011
Page 1
Comchip Technology CO., LTD.