SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBQR0230R
(RoHS Device)
Io = 200 mA
V
R
= 30 Volts
0402(1005)
0.041(1.05)
0.037(0.95)
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.026(0.65)
0.022(0.55)
Mechanical data
0.022(0.55)
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BB
Mounting position: Any.
Weight: 0.001 gram(approx.).
0.018(0.45)
0.012(0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
200
1
125
-40
+125
+125
V
V
mA
A
mW
O
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
P
D
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
I
F
= 200 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.6
1
V
uA
REV:C
QW-A1117
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