SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBU00340
Io = 3 0 mA
V
R
= 40 Volt s
Features
(Lead-free Device)
Designed for mounting on small surface.
Extremely thin/leadless package.
Low capacitance.
Majority carrier conduction.
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Mechanical data
Case:
0603 (1608) Standard package ,
molded plastic.
0.010(0.25) Typ.
0.033 (0.85)
0.027 (0.70)
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.003 gram (approximately).
0.014(0.35) Typ.
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
( at T
A
= 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
Io
I
FSM
P
D
T
STG
Tj
-40
-40
500
150
+125
+125
45
40
30
V
V
mA
mA
mW
C
C
Electrical Characteristics
( at T
A
= 25 C unless otherwise noted )
Parameter
Forward voltage
Reverse current
Capacitance between terminals
V
R
= 30 V
V
R
= 40V
f = 1MHz, and 1 VDC reverse voltage
Conditions
I
F
= 1 mA DC
Symbol Min Typ Max Unit
V
F
I
R
C
T
1.5
0.37
0.5
1
uA
pF
V
RDS0301004-B
COMCHIP [ COMCHIP TECHNOLOGY ]
