SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBU0130R
Io = 100 mA
V
R
= 30 Volts
(RoHS Device)
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Mechanical data
0.033(0.85)
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BQ
Mounting position: Any
Weight: 0.003 gram(approx.).
0.027(0.70)
0.014(0.35) Typ.
0.012 (0.30) Typ.
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
100
V
V
mA
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
T
STG
T
j
-40
1
+125
+125
A
O
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
I
F
= 10 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.45
0.5
V
uA
REV:A
QW-A1108
Page 1
Comchip Technology CO., LTD.
COMCHIP [ COMCHIP TECHNOLOGY ]
