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CDBW0540-G 参数 Datasheet PDF下载

CDBW0540-G图片预览
型号: CDBW0540-G
PDF下载: 下载PDF文件 查看货源
内容描述: SMD肖特基势垒二极管 [SMD Schottky Barrier Diodes]
分类和应用: 二极管
文件页数/大小: 4 页 / 90 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
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SMD Schottky Barrier Diodes
CDBW0520L-G Thru. CDBW0540-G
Reverse Voltage: 20 to 40 Volts
Forward Current: 0.5 Amp
RoHS Device
Features
-Low turn on voltage.
-Fast switching.
-PN junction guard ring for transient and ESD
protection.
0.028(0.70)
0.019(0.50)
0.110(2.80)
0.098(2.50)
SOD-123
0.071(1.80)
0.055(1.40)
Mechanical data
-Case: SOD-123, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Weight: 0.0097 gram(approx.).
0.053(1.35)
0.037(0.95)
0.154(3.90)
0.141(3.60)
0.008(0.20)
Max.
0.005(0.12)
Max.
0.016(0.40)
Min.
Marking
CDBW0520L-G: SD
Dimensions in inches and (millimeter)
CDBW0530-G: SE
CDBW0540-G: SF
Maximum Ratings and Electrical Characteristics
(At Ta=25°C, unless otherwise noted)
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. forward voltage
Symbol
V
RRM
V
DC
V
RMS
CDBW0520L-G
20
20
14
CDBW0530-G
30
30
21
CDBW0540-G
40
40
28
Units
V
V
V
I
FSM
5.5
A
I
O
V
F
0.3@I
F
=0.1A
0.385@I
F
=0.5A
0.075@V
R
=10V
0.25@V
R
=20V
0.5
0.375@I
F
=0.1A
0.430@I
F
=0.5A
0.02@V
R
=15V
0.13@V
R
=30V
206
150
125
-55 to +125
0.51@I
F
=0.5A
0.62@IF=1.0A
0.01@V
R
=20V
0.02@V
R
=40V
A
V
Max. reverse current
I
R
R
θJA
R
θJL
T
J
T
STG
mA
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
°C/W
°C
°C
2
Notes: 1. Thermal resistance from junction to ambient and junction to lead, mounted on P.C.B. with 0.2×0.2 inch copper pad area.
REV:B
QW-BB001
Page 1
Comchip Technology CO., LTD.