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KBU610 参数 Datasheet PDF下载

KBU610图片预览
型号: KBU610
PDF下载: 下载PDF文件 查看货源
内容描述: 硅桥式整流器 [Silicon Bridge Rectifiers]
分类和应用: 整流二极管局域网
文件页数/大小: 3 页 / 139 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
 浏览型号KBU610的Datasheet PDF文件第2页浏览型号KBU610的Datasheet PDF文件第3页  
Silicon Bridge Rectifiers
COMCHIP
www.comchiptech.com
KBU600 Thru 610
Reverse Voltage: 50 - 1000 Volts
Forward Current: 6.0 Amp
KBU
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
KBU
Dim
Min
Max
A
23.70
22.7
B
4.10
3.80
C
4.70
4.20
D
2.20
1.70
E
11.30
10.30
G
6.80
4.50
H
5.60
4.60
J
-
25.40
K
19.30
-
L
17.80
16.80
M
7.10
6.60
N
5.20
4.70
P
1.20
1.30
All Dimensions in mm
Maximum Ratings and Electrical Characterics
Single Phase, half wave, 60Hz, resisti ve or induct ive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Peak Repetitiv e Reverse Voltage
Working Peak Reverse Volt age
DC Blocking Voltage
RMS Reverse Volt age
Average Recti fied Output Current @ T
A
= 100°C
Non-Repetitiv e Peak Forward Surge Current 8.3m s
Single half sine-wave superimposed on rat ed load
(JEDEC Method)
Forward Voltage (per elem ent) @I
F
= 3.0A
Peak Reverse Current
@ T
C
= 25°C
At Rated DC Blocki ng Voltage @T
C
= 100°C
Rating for Fusing (t < 8.3ms) (Note1)
Typical Thermal Resistance (Note2)
Operating and Storage T emperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
I
2
t
R
JC
Tj, T
STG
35
70
140
280
6.0
250
1.0
10
1.0
166
4.2
-65 to +150
420
560
700
V
A
A
V
uA
mA
A
2
s
K/W
°C
50
100
200
400
600
800
1000
V
KBU
600
KBU
601
KBU
602
KBU
604
KBU
606
KBU
608
KBU
610
UNIT
Note:
1. Non-repetiti ve for t > 1ms and < 8.3m s.
2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13. 0 x 0.03mm thick land areas.
MDS0306003A
Page 1