Schottky Barrier Rectifiers
Voltage: 30 to 100 V
Current: 10.0 A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
-High current capability.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
0.157(4.00)
0.118(3.00)
0.118(3.00)
0.102(2.60)
Comchip
SMD Diode Specialist
MBRF1030CT-G Thru. MBRF10100CT-G
ITO-220AB
0.406(10.30)
0.386( 9.80)
0.138(3.50)
0.122(3.10)
0.189(4.80)
0.173(4.40)
0.118(3.00)
0.102(2.60)
0.622(15.80)
0.583(14.80)
Mechanical Data
-Case: ITO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 2.24 grams
0.059(1.50)
0.043(1.10)
0.031(0.80)
0.020(0.50)
0.071
MAX
(1.80)
0.551(14.00)
0.511(13.00)
0.105(2.67)
0.095(2.41)
0.028(0.70)
0.020(0.50)
0.114(2.90)
0.098(2.50)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current ( See Fig.1 )
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
IF=5A@ T
J
= 25°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
MBRF
MBRF
MBRF
MBRF
MBRF
MBRF
MBRF
1030CT-G 1040CT-G 1045CT-G 1050CT-G 1060CT-G 1080CT-G 10100CT-G
30
21
30
40
28
40
45
31.5
45
50
35
50
10
60
42
60
80
56
80
100
70
100
Unit
V
V
V
A
120
0.70
0.57
0.80
0.70
0.1
15
170
3.0
-55 to +150
-55 to +175
220
300
3.0
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
A
Peak Forward Voltage
(Note 1)
IF=5A@ T
J
=125°C
IF=10A@ T
J
= 25°C
IF=10A@ T
J
=125°C
V
F
V
Maximum DC Reverse Current
@ T
J
= 25°C
at Rate DC Blocking Voltage
@ T
J
= 125°C
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
I
R
C
J
R
θJC
T
J
T
STG
mA
pF
°C/W
°C
°C
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
QW-BB052
REV:A
Page 1
Comchip Technology CO., LTD.
COMCHIP [ COMCHIP TECHNOLOGY ]
