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RB520S-30 参数 Datasheet PDF下载

RB520S-30图片预览
型号: RB520S-30
PDF下载: 下载PDF文件 查看货源
内容描述: SMD肖特基势垒二极管 [SMD Schottky Barrier Diodes]
分类和应用: 二极管光电二极管
文件页数/大小: 4 页 / 102 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
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SMD Schottky Barrier Diodes
RB520S-30
Io = 200 mA
V
R
= 30 Volts
+
RoHS Device
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin package.
Majority carrier conduction.
0.008(0.20)
REF
-
SOD-523
0.051(1.30)
0.043(1.10)
0.014(0.35)
0.010(0.25)
0.033(0.85)
0.030(0.75)
Mechanical data
Case: SOD-523 standard package,
molded plastic.
Terminals: solderable per MIL-STD-750
,method 2026.
Marking code: cathode band & B
Mounting position: Any
Weight: 0.0012 gram(approx.).
0.031(0.77)
0.020(0.51)
0.067(1.70)
0.059(1.50)
0.006(0.15)
0.003(0.08)
0.003(0.07)
0.001(0.01)
Dimensions in inches and (millimeter)
Circuit Diagram
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
DCReverse voltage
Mean rectkfying current
Peak forward surge current
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
R
I
O
30
200
V
mA
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
T
STG
T
j
-40
1
+125
+125
A
O
C
C
O
Electrical Characteristics
(At Ta=25°C, unless otherwise noted)
Parameter
Forward voltage
Reverse current
I
F
= 200 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.6
1
V
µA
REV:B
QW-BB023
Page 1
Comchip Technology CO., LTD.