SMD Schottky Barrier Diode
SMD Diodes Specialist
RB551V-30
(RoHS Device)
Io = 500 mA
V
R
= 20 Volts
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.014 ( 0.35 )
0.010(0.25)
0.071 ( 1.80 )
0.063 ( 1.60 )
SOD-323
0.055 ( 1.40 )
0.047 ( 1.20 )
Mechanical data
Case: SOD-323 Standard package, molded
plastic.
Terminals: Gold plated, solderable per MIL-
STD-750D, method 2026.
Mounting position: Any.
0.106 ( 2.70 )
0.098 ( 2.50 )
0.039(1.00)Max.
0.004(0.10)Max.
0.006 ( 0.15 )Max.
0.019 ( 0.475 )REF
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
I
FSM
T
STG
T
j
-40
30
20
500
2
+125
+125
V
V
mA
A
°C
°C
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
I
F
= 100 mA
I
F
= 500 mA
V
R
= 20 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.36
0.47
100
V
uA
REV:B
QW-BB026
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