BDY23 – 180T2
BDY24 – 181T2
BDY25 – 182T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
They are NPN transistors mounted in Jedec TO-3.
LF Large Signal Power Amplification.
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
@ T
C
= 25°
Value
60
90
140
60
100
200
10
Unit
V
V
CBO
Collector-Base Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
6
A
I
B
P
TOT
T
J
T
S
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
3
87.5
-65 to +200
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
2
Unit
°C/W
31/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
