2N1595 thru 2N1599
SILICON THYRISTOR
Industrial-type, low-current silicon controlled rectifiers
in a three-lead package ideal for printed-circuit applications.
Current handling capability of 1.6 amperes at junction temperetures to 125°C
MAXIMUM RATINGS (*)
T
J
=125°C unless otherwise noted
Symbol
V
RSM(REP)
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GFM
V
GRM
T
J
T
STG
Ratings
Peak reverse blocking voltage *
Forward Current RMS (all conduction
angles)
Peak Surge Current
(One Cycle, 60Hz, T
J
=-65 to +125°C)
Peak Gate Power – Forward
Average Gate Power - Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
Operating
Range
Junction
Temperature
2N1595
2N1596
2N1597
2N1598
2N1599
50
100
200
1.6
15
0.1
0.01
0.1
300
400
V
Amp
Amp
W
W
Amp
10
10
-65 to +125
V
V
°C
Storage Temperature Range
-65 to +150
ELECTRICAL CHARACTERISTICS
T
J
=25°C unless otherwise noted, R
GK
=1000Ω
Symbol
V
DRM
I
RRM
Ratings
Peak Forward Blocking
Min :
Voltage *
Peak Reverse Blocking Current
(Rated
V
DRM
,
T
J
=125°C)
2N1595
2N1596 2N1597 2N1598
2N1599
50
100
200
Max : 1.0
300
400
V
mA
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
