NPN 2N2484
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package.
They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@ T
amb
= 25°
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T
case
= 25°
@ T
case
<100°
Ratings
Value
60
60
6
50
0.36
1.2
0.68
200
-65 to +200
Unit
V
V
V
mA
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
486
146
Unit
°C/ W
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CBO
I
EBO
V
CEO
(*)
V
CBO
V
EBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Test Condition(s)
V
CB
=45 V, I
E
=0
V
CB
=45 V, I
E
=0, T
j
=150°C
V
BE
=5.0 V, I
C
=0
I
C
=10 mA, I
B
=0
I
C
=10 µA, I
E
=0
I
E
=10 µA, I
C
=0
Min Typ Mx Unit
-
-
-
60
60
6
-
-
-
-
-
-
10
10
10
-
-
-
1/3
nA
µA
nA
V
V
V
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
