2N2646 – 2N2647
SILICON UNIJUNCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
for triggering high power SCR’s.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
T
j
=125°C unless otherwise noted
Symbol
V
B2E
I
e
Ratings
2N2646 – 2N2647
30
50
2
35
300
-65 to +125
-65 to +150
Unit
V
mA
A
V
mW
°C
°C
Emitter-Base2 Voltage
RMS Emitter Current
Peak Pulse Emitter Current *
i
e
Interbase Voltage
V
B2B1
P
D
RMS power Dissipation
T
J
Junction Temperature
T
Stg
Storage Temperature
Capacitor discharge – 10µF or less, 30volts or less.
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
η
R
BBO
V
EB1(sat)
I
B2(MOD)
I
EO
V
(BR)B1E
I
V
I
P
Ratings
Intrinsic stand-off ratio
V
B2B1
= 10V
Interbase Resistance , V
B2B1
= 3V
Emitter Saturation Voltage
V
B2B1
= 10V , I
E
= 50 mA
Modulated Interbase Current
V
B2B1
= 10V , I
E
= 50 mA
Emitter Revers Current
V
B2E
= 30 V , I
B1
= 0
Base 1 Emitter breakdown Voltage
I
E
=100 µA
Valley Current , V
B2B1
= 20 V
Peak Current , V
B2B1
= 25 V
2N2646
2N2647
Min.
0.56
0.68
4.7
-
-
-
30
2N2646
2N2647
2N2646
2N2647
4
8
-
-
Typ.
-
-
-
-
15
-
-
-
-
-
-
Max.
0.75
0.82
9.1
2.5
-
12
-
-
-
5
2
Unit
-
KΩ
V
V
µA
V
mA
µA
24/09/2012
COMSET SEMICONDUCTORS
1|2
COMSET [ COMSET SEMICONDUCTOR ]
