2N2646
2N2647
SILICON UNIJUNCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation
voltage, peak-point current and valley current as zell as a much higher base-one peak
pulse voltage. In addition, these devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit
economy is of primary importance, and is ideal for use in firing circuits for Silicon
Controlled Rectifiers and other applications where a guaranteed minimum pulse
amplitude is required. The 2N2647 is intended for applications where a low emitter
leakage current and a low peak point emitter current (trigger current) are required and
also for triggering high power SCR’s.
ABSOLUTE MAXIMUM RATINGS
T
j
=125°C unless otherwise noted
Symbol
V
B2E
I
e
i
e
V
B2B1
P
D
T
J
T
Stg
Ratings
2N2646
2N2647
30
50
2
35
300
Unit
V
mA
A
V
mW
°C
°C
Emitter-Base2 Voltage
RMS Emitter Current
Peak Pulse Emitter Current *
Interbase Voltage
RMS power Dissipation
Junction Temperature
Storage Temperature
Capacitor discharge – 10µF or less, 30volts or less.
-65 to +125
-65 to +150
COMSET [ COMSET SEMICONDUCTOR ]
