NPN 2N2894
HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
They are intended for high speed, low saturation switching applications up to 100 mA.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage(V
BE
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
@ T
amb
= 25°
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T
case
= 25°
@ T
case
<100°
Value
-12
-12
-12
-4
-200
0.36
1.2
1
-65 to +200
-65 to +200
Unit
V
V
V
V
mA
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
486
146
Unit
°C/ W
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CES
V
CEO
(*)
V
CES
V
CBO
V
EBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Test Condition(s)
V
CB
=-6 V, I
E
=0V,
T
j
=125°C
V
BE
=0 V, V
CE
=-6 V
I
C
=-10 mA, I
B
=0
V
BE
=0 V, I
C
=-10 µA
I
C
=-10 µA, I
E
=0
I
E
=-100 µA, I
C
=0
Min
-
-
-12
-12
-12
-4
Typ
-
-
-
-
-
-
Mx
-10
-80
-
-
-
-
Unit
µA
nA
V
V
V
V
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
