NPN 2N3019 – 2N3020
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .
They are intended for high-current, high-frequency amplifier applications.
They feature high gain and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T
amb
= 25°
@ T
case
= 25°
Ratings
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
Value
80
140
7
1
0.8
Unit
V
V
V
A
Watts
5
200
-65 to +200
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to ambient in free
air
Thermal Resistance, Junction to case
2N3019
2N3020
2N3019
2N3020
Value
35
219
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
COMSET [ COMSET SEMICONDUCTOR ]
