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2N3055_12 参数 Datasheet PDF下载

2N3055_12图片预览
型号: 2N3055_12
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅DARLINGTONS [NPN SILICON DARLINGTONS]
分类和应用:
文件页数/大小: 3 页 / 76 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N3055_12的Datasheet PDF文件第2页浏览型号2N3055_12的Datasheet PDF文件第3页  
2N3055
NPN SILICON DARLINGTONS
The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
Designed for general purpose, moderate speed, switching and amplifier applications
Compliance to RoHS
.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
VCER
Ratings
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
Derate above 25°
Value
100
60
70
7
100
7
15
7
115
0.657
200
-65 to +200
Unit
V
V
V
V
V
V
A
A
W
W/°C
°C
°C
V
EBO
V
CB
V
EB
I
C
I
B
P
D
T
J
T
S
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.52
Unit
°C/W
31/10/2012
COMSET SEMICONDUCTORS
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