2N3055
POWER LINEAR AND SWITCHING
APPLICATIONS
The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case.
It is intended for power switching circuits, series and shunt regulators, output stages
and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
CER
V
EBO
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
Derate above 25°
Ratings
Value
100
60
70
7
15
7
115
0.657
200
-65 to
+200
Unit
V
V
V
V
Adc
Adc
Watts
W/°C
°C
°C
I
C
I
B
P
D
T
J
T
S
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.52
Unit
°C/W
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
