NPN 2N3439 – 2N3440
HIGH VOLTAGE TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors
mounted in TO-39 metal package.
They are intended for use in power amplifier, in consumer and
industrial line-operated applications.
These devices are particularity suited as drives in high voltage low
current inverters, switching and series regulators.
Compliance to RoHS.
B
E
ABSOLUTE MAXIMUM RATINGS
Value
2N3439
I
B
= 0
I
E
= 0
I
C
= 0
350
450
7
1
500
1
10
200
-65 to +200
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
J
T
Stg
Ratings
Collector-Emitter
Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
2N3440
250
300
Unit
V
V
V
A
mA
W
°C
T
amb
= 25°
T
case
= 25°
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
35
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
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