2N3442 参数 Datasheet PDF下载

2N3442

2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

NPN silicon transistors designed for applications in industrial and commercial equipment including high

fidelity audio amplifiers, series and shunts regulators and power switches.

•

Low Collector-Emitter Saturation Voltage –

V

CE(sat)

= 1.0 Vdc (Max) @ I

C

= 2.0 Adc – 2N4347

•

Collector-Emitter Sustaining Voltage-

VCEO(sus) = 120 Vdc (Min) – 2N4347

140 Vdc (Min) – 2N3442

•

Excellent Second-Breakdown Capability

ABSOLUTE MAXIMUM RATINGS

Symbol

V

CEO

V

CB

V

EB

I

C

Ratings

#Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Continuous

Collector Current

Peak

Continuous

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

Value

120

140

140

160

7.0

5.0

10

10

15 (**)

3.0

7.0

8.0

-

100

117

0.57

0.67

-65 to +200

Unit

V

Vdc

Vdc

Adc

I

B

Base Current

Peak

Total Device Dissipation

@ T

C

= 25°

Derate

above 25°

Junction Temperature

Storage Temperature

Adc

P

D

T

J

T

S

Watts

W/°C

°C

°C

(**) This data guaranteed in addition to JEDEC registered data.

COMSET SEMICONDUCTORS

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