NPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
High voltage power transistors designed for industrial and military applications.
TO-66 metal case.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Ratings
Collector-Base Voltage (I
E
= 0)
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
t
p
= 10ms
@ T
mb
= 70°C
Value
250
330
440
175
250
300
6
1
2
2
5
1
35
200
-65 to +200
Unit
V
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
A
Watts
°C
°C
I
C
I
CM
I
B
P
T
T
J
T
Stg
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to ambient in free air
Value
5
87.5
Unit
°C/W
COMSET SEMICONDUCTORS
1
COMSET [ COMSET SEMICONDUCTOR ]
