NPN 2N3866
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CES
V
EBO
I
C
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage (V
BE
= 0)
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
case
= 25°
Junction Temperature
Storage Temperature range
Value
30
55
3.5
0.5
5
200
-65 to +200
Unit
V
V
V
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-c
Ratings
Thermal Resistance, Junction-case
Value
35
Unit
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CEO
V
CEO
(*)
V
CES
V
EBO
h
FE
(*)
V
CE(SAT)
(*)
Ratings
Collector Cutoff Current
Collector Emitter Sustaining
Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
DC Current Gain
Collector-Emitter saturation
Voltage
Test Condition(s)
Min
-
30
55
3.5
10
5
-
Typ
-
-
-
-
-
-
-
Max
20
-
-
-
200
-
1
Unit
µA
V
V
V
-
V
V
CE
=28 V, I
B
=0
I
C
=5 mA, I
B
=0
I
C
=100 µA, V
BE
=0
I
E
=100 µA, I
C
=0
I
C
=50 mA, V
CE
=5 V
I
C
=360 mA, V
CE
=5 V
I
C
=100 mA
I
B
=20 mA
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
