THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, Junction to Case
Junction to Free Air Thermal Resistance
Value
2
47.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(BR)
Ratings
Collector-Emitter
Breakdown Voltage)
Test Condition(s)
I
C
=200 mAdc, I
B
=0
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
Min
-40
-60
-80
20
Typ
-
Mx
-
Unit
V
V
CE
=-2.0 V, I
C
=-1.0 A
-
80
V
h
FE
DC Current Gain (*)
V
CE
=-2.0 V, I
C
=-5.0 A
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-0.1
-2.0
-0.1
-2.0
-0.1
-2.0
-1.0
mA
mA
I
CBO
Collector-Base cut-off
Current
I
CEX
Collector Cutoff Current
V
CE
=-40 V, I
E
=0
V
CE
=-60 V, I
E
=0
V
CE
=-80 V, I
E
=0
V
CE
=-40 V, V
EB
=1.5 V
V
CE
=-40 V, V
EB
=1.5 V,
T
CASE
=150°C
V
CE
=-60 V, V
EB
=1.5 V
V
CE
=-60 V, V
EB
=1.5 V,
T
CASE
=150°C
V
CE
=-80 V, V
EB
=1.5 V
V
CE
=-80 V, V
EB
=1.5 V,
T
CASE
=150°C
V
BE
=5.0 V, I
C
=0
V
CE
=-10 V, I
C
=-0.5 A
f =1MHz
I
C
=-1.0 A, I
B
=-0.1 A
mA
2N4902
-
-
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
-
-
I
EBO
H
fe
Emitter Cutoff Current
Forward Current Transfer
Ratio (*)
20
-
-
V
-
-
-0.4
V
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=-5.0 A, I
B
=-1.0 A
-
-
-1.5
V
BE
Base-Emitter Voltage (*)
I
C
=-1.0 A, V
CE
=-2.0 V
-
-
-1.2
V
3
COMSET [ COMSET SEMICONDUCTOR ]
