PNP 2N5322 – 2N5323
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and
commercial equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
CEV
V
EBO
I
C
I
B
Ratings
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 1.5V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
@ T
amb
= 25°
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
Value
-75
-50
-100
-75
-100
-75
-6
-5
-2
-1
1
Unit
V
V
V
V
A
A
P
D
Total Power Dissipation
@ T
case
= 25°
W
10
-65 to +200
-65 to +200
°C
°C
T
J
T
Stg
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
