PNP 2N6053
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted
in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary NPN types are 2N6055.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
s
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction
Storage Temperature
Ratings
I
E
=0
I
B
=0
I
C
=0
2N6053
2N6053
Value
-60
-60
-5.0
-8
-16
-120
100
200
-65 to +200
Unit
V
V
V
A
A
mA
W
°C
@ T
C
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
