NPN 2N6057 – 2N6058 – 2N6059
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary PNP types are 2N6050, 2N6051 and 2N6052 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
I
E
=0
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
Value
60
80
100
60
80
100
60
80
100
5.0
12
20
200
150
200
-65 to +200
Unit
V
V
CEO
Collector-EmitterVoltage
I
B
=0
V
V
CEX
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
s
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V
BE
= 1.5 V
I
C
=0
V
V
A
A
mA
W
°C
@ T
C
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
