NPN 2N6057 – 2N6058 – 2N6059
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
CE
= V
CEX
=60 V
,
V
BE
=-1.5 V
V
CE
= V
CEX
=80 V
,
V
BE
=-1.5 V
V
CE
= V
CEX
=100 V
V
BE
=-1.5 V
V
CE
= V
CEX
=60 V
,
V
BE
=-1.5 V
T
C
=150°C
V
CE
= V
CEX
=80 V
,
V
BE
=-1.5 V
T
C
=150°C
V
CE
= V
CEX
=100 V
V
BE
=-1.5 V, T
C
=150°C
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
V
CE
=50 Vdc, I
B
=0
V
EB
=5 V
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
Min
-
-
-
-
-
-
-
-
-
-
-
-
60
80
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAx Unit
µA
500
I
CEX
Collector Cutoff
Current
5
mA
I
CEO
Collector Cutoff
Current
Emitter Cutoff
Current
1.0
mA
I
EBO
2.0
-
-
-
2.0
mA
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage I
C
=0.1 A
(*)
Collector-Emitter
saturation Voltage
(*)
I
C
=6 A, I
B
=24 mA
V
V
CE(SAT)
V
-
-
3.0
I
C
=12 A, I
B
=120 mA
V
BE(SAT)
Base-Emitter
Saturation Voltage I
C
=12 A, I
B
=120 mA
(*)
Base-Emitter
Voltage (*)
Transition
Frequency
I
C
=6 A, V
CE
=3 V
-
-
4
V
V
BE(ON)
-
-
2.8
V
f
T
I
C
=5 A, V
CE
=3 V, f=1 MHz
4
-
-
MHz
V
CE
=3 V, I
C
=6.0 A
h
FE
DC Current Gain
(*)
V
CE
=3.0 V, I
C
=12 A
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
17/10/2012
750
-
18000
-
100
-
-
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
