2N6249 – 2N6250 – 2N6251
I
EBO
Emitter Cutoff Current
Ssecond Breakdown
Collector Current with
base forward biased
t=1.0S non-repetitive
Ssecond Breakdown
Energy with base reverse
biased t=1.0S non-
repetitive
DC Current Gain
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
V
BE
=6.0 Vdc, I
C
=0
I
s/b
V
CE
=30 Vdc
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
-
5.8
5.8
5.8
2.5
2.5
2.5
10
8.0
6.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
-
-
-
-
-
-
50
50
50
1.5
1.5
1.5
2.5
2.5
2.5
mAdc
Vdc
E
s/b
I
C
= 10 A, V
BE(off)
= 4.0Vdc,
L = 50 µH
mJ
h
FE
V
CE(SAT)
V
BE(SAT)
I
C
=10 Adc, V
CE
=3.0 Vdc
I
C
=10 Adc, I
B
=1 Adc
I
C
=10 Adc, I
B
=1.25 Adc
I
C
=10 Adc, I
B
=1.67 Adc
I
C
=10 Adc, I
B
=1 Adc
I
C
=10 Adc, I
B
=1.25 Adc
I
C
=10 Adc, I
B
=1.67 Adc
-
Vdc
Vdc
(1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ).
Symbol
f
T
t
r
t
s
t
f
Ratings
Current Gain – Bandwith
Product
Test Condition(s)
Min Typ Mx Unit
2.5
2N6259
2N6250
2N6251
-
-
-
-
-
-
-
-
2.0
3.5
1.0
MHz
V
CE
=10 Vdc, I
C
=1.0 Adc,
f
test
= 1.0 Mhz
V
CC
= 200 Vdc, I
C
= 10 A, Duty Cycle <= 2.0% t
p
= 100 µs
Rise Time
I
B1
= I
B2
=1.0 Adc
Storage Time
I
B1
= I
B2
=1.25 Adc
Fall Time
I
B1
= I
B2
=1.67 Adc
µs
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
COMSET [ COMSET SEMICONDUCTOR ]
