NPN 2N6253 – 2N6254 – 2N6371
HIGH POWER SILICON NPN TRANSISTORS
The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal
package.
Tey are intended for a wide variety of high-power applications. The construction of these
devices renders them highly resistant to second breakdown over a wide range of operating
conditions.
These devices differ in maximum ratings for voltage and power dissipation.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO(SUS)
Collector-Emitter Voltage
Ratings
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
Value
Unit
V
CBO
Collector-Base Voltage (*)
Collector-Emitter Voltage
R
BE
=100Ω
Collector-Emitter Voltage
V
BE
=-1.5V
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
< 25°C
> 25°C
V
CER(SUS)
V
CEV(SUS)
V
EBO
I
C
I
B
P
TOT
T
J
T
S
2N6253
2N6254
2N6371
45
V
80
40
55
V
100
50
55
85
V
45
55
90
V
50
5
7
V
5
15
A
7
A
115
Watts
150
117
Derate Linearly to 200°C
-65 to +200
°C
09/11/2012
COMSET SEMICONDUCTORS
1|4
COMSET [ COMSET SEMICONDUCTOR ]
