NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
Symbol
I
CES
V
CB0
V
CE0
(*)
V
EB0
V
CE(SAT)
(*)
Ratings
Collector – Cutoff Current
Test Condition(s)
I
E
= 0 ;V
CES
= 60 V
I
E
= 0 ; V
CES
= 60 V
Min
-
-
80
100
40
60
7
-
-
-
-
-
-
40
63
100
-
-
-
50
-
-
-
Typ Mx Unit
-
-
-
-
-
-
-
0.1
0.35
0.6
1.25
75
40
90
140
100
160
26
20
30
-
12
-
-
100
100
-
-
-
-
-
nA
µA
V
V
V
T
amb
= 150°c
Collector – Base Breakdown I
C
= 100 µA
I
E
= 0
Voltage
Collector – Emitter
I
C
= 30 mA
I
B
= 0
Breakdown Voltage
Emitter – Base Breakdown
I
E
= 100 µA
I
C
= 0
Voltage
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
I
C
= 100 mA , I
B
= 10 mA
I
C
= 500 mA , I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 1 A , V
CE
= 1V
I
C
= 100 µA , V
CE
= 1 V
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
V
BE
(*)
Gr 10
Gr 16
Gr 10
Gr 16
Gr 10
Gr 16
h
FE
(*)
DC Current Gain
I
C
= 100 mA , V
CE
= 1 V
I
C
= 1 A , V
CE
= 1 V
f
T
C
CBO
t
off
t
on
Transition Frequency
Collector – base
Capacitance
Turn-off times
Turn-on times
I
C
= 50 mA , V
CE
= 10 V
I
E
= 0 ;V
CB
= 10V
f = 1 MH
Z
I
C
=100 mA
I
B1
=-I
B2
=5 mA
I
C
=100 mA
I
B1
=1 mA
1
1.8
-
-
-
250
160
250
-
-
-
-
25
850
250
V
-
MH
Z
pF
ns
ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
