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BCY58_12 参数 Datasheet PDF下载

BCY58_12图片预览
型号: BCY58_12
PDF下载: 下载PDF文件 查看货源
内容描述: 硅平面外延晶体管 [SILICON PLANAR EPITAXIAL TRANSISTORS]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 86 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号BCY58_12的Datasheet PDF文件第2页浏览型号BCY58_12的Datasheet PDF文件第3页浏览型号BCY58_12的Datasheet PDF文件第4页  
NPN BCY58 – BCY59
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CES
V
EBO
I
C
I
B
P
D
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage(1)
Collector-Emitter Voltage (V
BE
=0)
Emitter-Base Voltage
Collector Current
Base Current
Total Power
Dissipation
Total Power
Dissipation
@ T
amb
= 45°
@ T
case
= 45°
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Value
45
32
45
32
7
7
200
50
0.39
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
Watts
°C
°C
Junction Temperature
Storage Temperature range
(1) Applicable up to I
C
= 500mA
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4