NPN BD131
SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD131are NPN transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
PNP complements are BD132
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
I
C
I
CM
I
BM
I
BM
@ T
mb
= 60°C
Value
45
45
4
3
6
0.5
0.5
15
150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
Thermal Resistance, Junction to mouting base
Value
6
Unit
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Ratings
Collector cut-off current
Test Condition(s)
Min
-
-
-
-
-
-
-
40
20
Typ
-
-
-
-
-
-
-
-
-
Max
5
500
5
0.3
1.2
0.7
1,5
-
-
Unit
µA
µA
V
V
I
E
=0 , V
CB
=40 V
I
E
=0 , V
CB
=40 V ,T
j
= 150°C
Emitter cut-offcurrent
I
C
=0, V
EB
=3 V
Collector-Emitter saturation I
C
=0.5 A, I
B
=50 mA
Voltage
I
C
=2.0 A, I
B
=200 mA
I
C
=0.5 A, I
B
=50 mA
Base-Emitter saturation
Voltage
I
C
=2.0 A, I
B
=200 mA
V
CE
=12 V, I
C
=500m A
DC Current Gain
V
CE
=1 V, I
C
=2 A
COMSET SEMICONDUCTORS
18/10/2012
1|2
COMSET [ COMSET SEMICONDUCTOR ]
