NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Ratings
Collector-Base Voltage (I
E
= 0)
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
I
C
I
CM
I
B
T
mb
= 70°C
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
V
V
CER
V
EBO
I
C
I
B
P
T
T
J
T
Stg
Collector-Emitter Voltage (R
BE
= 1 kΩ)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-c
R
thJ-a
Ratings
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
10
100
Unit
°C/W
°C/W
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
