NPN BD241 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector Cutoff Current
Test Condition(s)
V
CE
=30 V
V
CE
=30 V
V
CE
=60 V
V
CE
=60 V
V
BE
=5 V
V
CE
=55 V
V
CE
=70 V
V
CE
=90 V
V
CE
=115 V
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
Min
-
-
-
-
-
-
-
-
-
-
-
-
45
60
80
100
25
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
Unit
I
CEO
0.3
mA
I
EBO
Emitter Cutoff Current
1.0
mA
I
CES
Collector Cutoff Current
(V
BE
= 0)
0.2
mA
V
CEO(sus)
Collector-Emitter Sustaining
I
C
=30mA
Voltage (I
B
= 0) (*)
V
V
CE
=4 V, I
C
=1 A
h
FE
DC Current Gain (*)
V
CE
=4 V, I
C
=3 A
-
-
-
10
-
-
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=3 A, I
B
=0.6 A
-
-
1.2
V
V
BE(on)
Base-Emitter Voltage (*)
V
CE
=4 V, I
C
=3 A
-
-
1.8
V
V
CE
=10 V
I
C
=0.5 A
f = 1KHz
h
fe
Small Signal Current Gain
V
CE
=10 V
I
C
=0.5 A
f = 1MHz
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
23/10/2012
20
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-
3
-
-
-
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
