BD245 – A – B – C
NPN SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
They are the power transistors for power amplifier and high-speed-switching applications.
The complementary is BD246, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD245
BD245A
BD245B
BD245C
BD245
BD245A
BD245B
BD245C
I
C
I
CM
T
mb
= 25° C
Value
45
60
80
100
55
70
90
115
5.0
10
15
3
80
-65 to +150
-65 to +150
Unit
V
CEO
Collector-Emitter Voltage (I
C
= -30mA)
V
V
CER
V
EBO
I
C
I
B
P
T
T
J
T
S
Collector-Emitter Voltage (R
BE
= 100
Ω)
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
1.56
42
Unit
°C / W
°C / W
22/10/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
