PNP BD676-BD678-BD680-BD682
NPN BD675-BD677-BD679-BD681
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
=0 , -
V
CB
= -V
CBOMAX
=45 V
I
E
=0 , -
V
CB
= -V
CBOMAX
=60 V
I
E
=0 , -
V
CB
= -V
CBOMAX
=80 V
I
E
=0 , -
V
CB
= -V
CBOMAX
=100 V
I
E
=0 ,
-
V
CB
=
-�½V
CBOMAX
=
45V,T
j
= 150°C
I
E
=0 ,
-
V
CB
=
-�½V
CBOMAX
=
60V,T
j
= 150°C
I
E
=0 ,
-
V
CB
=
-�½V
CBOMAX
=
80V,T
j
= 150°C
I
E
=0 ,
-
V
CB
=
-�½V
CBOMAX
=
100V,T
j
= 150°C
I
B
=0 , -
V
CE
= -�½V
CEOMAX
=60 V
I
C
=0, -V
EB
=5 V
-I
C
=1.5 A, -I
B
=6 mA
-V
CE
=3 V, -I
C
=500 mA
-V
CE
=3 V, -I
C
=1,5 A
-V
CE
=3 V, -I
C
=4 A
-V
CE
=3 V, -I
C
=1,5 A
-V
CE
=3 V, -I
C
=1,5 A, f= 1 MHz
-V
CE
=3 V, -I
C
=1,5 A
I
F
=1,5 A
-V
CE
=50 V, t
P
= 20ms,non rep., without
heatsink
BD676
BD678
BD680
BD682
BD676
BD678
BD680
BD682
BD676
BD678
BD680
BD682
Min Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
750
-
-
10
-
-
0,8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2200
-
650
-
-
60
1,5
-
0,3
1,5
M
Unit
x
0,2
0,2
0,2
0,2
1
1
1
1
0,2
0,2
0,2
0,2
5
2,5
-
-
-
2,5
-
-
-
-
1.5
5
mA
-I
CBO
Collector cut-off current
-I
CEO
-I
EBO
-V
CE(SAT)
h
FE
-V
BE
h
fe
f
hfe
V
F
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
DC Current Gain
mA
mA
V
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
-I
(SB)
collector current
Turn-on time
t
on
-I
con
= 1,5A, -I
bon
= I
boff
= 6mA,
Turn-off time
t
off
1. Measured under pulse conditions :
t
P
<300µs,
δ
<2%.
2.
V
BE
decreases by about 3,6 mV/K with increasing temperature.
V
kHz
V
A
µs
COMSET SEMICONDUCTORS
2
COMSET [ COMSET SEMICONDUCTOR ]
