PNP BD684 – BD684A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CEO
I
EBO
V
CE(SAT)
h
FE
V
BE
h
fe
f
hfe
V
F
I
(SB)
Ratings
Collector cut-off current
Test Condition(s)
Min
-
-
-
-
-
-
750
-
10
-
-
-0,8
-
-
Typ
-
-
-
-
-
-
-
-
-
60
-1,5
-
0,8
4,5
Max
-0,2
-2
-0,5
-5
-2,5
Unit
mA
mA
mA
V
I
E
=0, V
CB
= -120 V
I
E
=0, V
CB
= -120V, T
j
= 150°C
Collector cut-off current
I
B
=0,V
CE
= -1/2V
CEOMAX
Emitter cut-offcurrent
I
C
=0, V
EB
=-5 V
I
C
=-1.5 A
BD683
Collector-Emitter saturation I
B
=-30 mA
Voltage (*)
I
C
=-2 A, I
B
=-40 mA BD683A
V
CE
=-3 V, I
C
=-1.5 A BD683
V
CE
=-3 V, I
C
=-2 A
BD683A
V
CE
=-3 V, I
C
=-1.5 A BD683
V
CE
=-3 V, I
C
=-2 A
BD683A
V
CE
=-3 V, I
C
=-1.5 A, f= 1 MHz
V
CE
=-3 V, I
C
=-1.5 A
I
F
=-1,5 A
V
CE
=-50 V, t
P
= 20ms, non rep.
without heatsink
I
con
= -1.5A, I
bon
= -I
boff
= -6mA
V
CC
=-30V
-2,8
-
-2,5
-
-
-
-
2
8
-
V
-
kHz
V
A
µs
DC Current Gain (*)
Base-Emitter Voltage (*)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
collector current
Turn-on time
Turn-off time
t
on
t
off
(*)
Measured under pulse conditions :
t
P
<300µs,
δ
<2%.
23/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
