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BD684TO3_12 参数 Datasheet PDF下载

BD684TO3_12图片预览
型号: BD684TO3_12
PDF下载: 下载PDF文件 查看货源
内容描述: 硅达林顿功率晶体管 [SILICON DARLINGTON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 77 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号BD684TO3_12的Datasheet PDF文件第2页浏览型号BD684TO3_12的Datasheet PDF文件第3页  
PNP BD684 TO3 (Temporary part number)
SILICON DARLINGTON POWER TRANSISTORS
PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video
applications.
They are mounted in Jedec TO-3 metal package.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
BM
P
T
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
I
C
I
CM
@ T
mb
= 25°C
Value
-140
-140
-5
-4
-6
-0.1
65
150
-65 to +150
Unit
V
V
V
A
A
W-
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
R
thJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
K/W
K/W
Temporary datasheet
23/10/2012
COMSET SEMICONDUCTORS
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