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BD911 参数 Datasheet PDF下载

BD911图片预览
型号: BD911
PDF下载: 下载PDF文件 查看货源
内容描述: 硅功率晶体管 [SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 103 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号BD911的Datasheet PDF文件第2页浏览型号BD911的Datasheet PDF文件第3页  
SEMICONDUCTORS
BD909 – BD911
SILICON POWER TRANSISTORS
The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220
envelope. They are intended for use in power linear and switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
I
B
P
t
T
j
T
stg
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
I
E
= 0
I
B
= 0
I
C
= 0
Value
BD909
80
80
BD911
100
100
Unit
V
V
V
A
A
A
W
°C
5
15
15
5
90
150
-65 to 150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
From junction to mounting base
Value
1.4
Unit
°C/W
25/09/2012
COMSET SEMICONDUCTORS
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